STPSC10H065BY-TR Series

Automotive 650 V, 10 A DPAK Silicon Carbide Power Schottky Diode

Catalog

Automotive 650 V, 10 A DPAK Silicon Carbide Power Schottky Diode

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Current - Average Rectified (Io)	Package / Case	Reverse Recovery Time (trr)	Grade	Supplier Device Package	Mounting Type	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Qualification	Capacitance @ Vr, F	Technology	Current - Reverse Leakage @ Vr
STMicroelectronics STPSC10H065BY-TR	650 V	500 mA	10 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	0 ns	Automotive	DPAK	Surface Mount	-40 °C	175 ░C	AEC-Q101	480 pF	SiC (Silicon Carbide) Schottky	100 µA

Catalog

Automotive 650 V, 10 A DPAK Silicon Carbide Power Schottky Diode

Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the SiC diode will boost performance in hard switching conditions.