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TO-39 TO-205AD
Discrete Semiconductor Products

JANTXV2N5038

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Microchip Technology

90V 20A NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES

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Documents2N5038 2N5039
TO-39 TO-205AD
Discrete Semiconductor Products

JANTXV2N5038

Active
Microchip Technology

90V 20A NPN POWER BJT THT TO-3 ROHS COMPLIANT: YES

Deep-Dive with AI

Documents2N5038 2N5039

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV2N5038
Current - Collector (Ic) (Max)20 A
Current - Collector Cutoff (Max) [Max]1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]50 hFE
GradeMilitary
Mounting TypeThrough Hole
Package / CaseTO-39-3 Metal Can, TO-205AD
Power - Max [Max]140 W
QualificationMIL-PRF-19500/439
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1 V
Voltage - Collector Emitter Breakdown (Max) [Max]90 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 82.03
Microchip DirectN/A 1$ 88.34
NewarkEach 100$ 82.03
500$ 78.87

Description

General part information

JANTXV2N5038-Transistor Series

This specification covers the performance requirements for NPN silicon, high-power, 2N5038 and 2N5039 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/439. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device.

Documents

Technical documentation and resources