Discrete Semiconductor Products

PSMN5R9-30YL,115

Obsolete

MOSFET N-CH 30V 78A LFPAK56

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 78A LFPAK56

Technical Specifications

Parameters and characteristics for this part

Specification	PSMN5R9-30YL,115

Current - Continuous Drain (Id) @ 25°C	78 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	21.3 nC
Input Capacitance (Ciss) (Max) @ Vds	1226 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	63 W
Rds On (Max) @ Id, Vgs	6.1 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.15 V

Part	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Power Dissipation (Max)	Mounting Type	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Technology	Vgs(th) (Max) @ Id [Max]
Freescale Semiconductor - NXP PSMN5R9-30YL,115	6.1 mOhm	-55 °C	175 ░C	20 V	1226 pF	LFPAK56 Power-SO8	63 W	Surface Mount	N-Channel	21.3 nC	4.5 V 10 V	30 V	78 A	SC-100 SOT-669	MOSFET (Metal Oxide)	2.15 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 78A (Tc) 63W (Tc) Surface Mount LFPAK56, Power-SO8

Technical documentation and resources

No documents available