PSMN5 Series
Manufacturer: NXP USA Inc.
Beta
⌘K
MOSFET N-CH 100V 67.5A TO220F
| Part | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Rds On (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) (Tc) | FET Type | Vgs (Max) | Package Name | Vgs(th) (Max) | Input Capacitance (Ciss) (Max) | Package / Case | Technology | Gate Charge (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Operating Temperature (Min) | Operating Temperature (Max) | Package Width | Package Length |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 NXP USA Inc. | 63.8 W | 10 V | Through Hole | 5 mOhm | 100 V | 67.5 A | N-Channel | 20 V | TO-220F | 4 V | 9900 pF | Isolated Tab TO-220-3 Full Pack | MOSFET (Metal Oxide) | 153 nC | ||||||
 NXP USA Inc. | 63 W | Surface Mount | 6.1 mOhm | 30 V | 78 A | N-Channel | 20 V | LFPAK56 Power-SO8 | 2.15 V | 1226 pF | SC-100 SOT-669 | MOSFET (Metal Oxide) | 21.3 nC | 10 V | 4.5 V | -55 °C | 175 °C | |||
 NXP USA Inc. | 55 W | Surface Mount | 5.8 mOhm | 30 V | 40 A | N-Channel | 20 V | 8-DFN3333 | 2.15 V | 1316 pF | 8-VDFN Exposed Pad | MOSFET (Metal Oxide) | 24 nC 24 nC | 10 V | 4.5 V | -55 °C | 150 °C | 3.3 mm | 3.3 mm |