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TO-220-3FullPack_SOT186A
Discrete Semiconductor Products

PSMN5R0-100XS,127

Obsolete
NXP USA Inc.

MOSFET N-CH 100V 67.5A TO220F

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TO-220-3FullPack_SOT186A
Discrete Semiconductor Products

PSMN5R0-100XS,127

Obsolete
NXP USA Inc.

MOSFET N-CH 100V 67.5A TO220F

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationPSMN5R0-100XS,127
Current - Continuous Drain (Id) (Tc)67.5 A
Drain to Source Voltage (Vdss)100 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)153 nC
Input Capacitance (Ciss) (Max)9900 pF
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack, Isolated Tab
Package NameTO-220F
Power Dissipation (Max)63.8 W
Rds On (Max)5 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyN/A 0$ 0.001m+

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Description

General part information

PSMN5 Series

N-Channel 100 V 67.5A (Tc) 63.8W (Tc) Through Hole TO-220F

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