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HSOIC (DDA)
Integrated Circuits (ICs)

LM25101AMRX/NOPB

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Texas Instruments

3-A, 2-A OR 1-A HALF BRIDGE GATE DRIVER WITH 8-V UVLO AND TTL INPUTS

HSOIC (DDA)
Integrated Circuits (ICs)

LM25101AMRX/NOPB

Active
Texas Instruments

3-A, 2-A OR 1-A HALF BRIDGE GATE DRIVER WITH 8-V UVLO AND TTL INPUTS

Technical Specifications

Parameters and characteristics for this part

SpecificationLM25101AMRX/NOPB
Channel TypeIndependent
Current - Peak Output (Source, Sink) [custom]3 A
Current - Peak Output (Source, Sink) [custom]3 A
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]100 V
Input TypeNon-Inverting
Logic Voltage - VIL, VIH-
Logic Voltage - VIL, VIH2.3 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-40 °C
Package / Case8-PowerSOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Rise / Fall Time (Typ) [custom]260 ns
Rise / Fall Time (Typ) [custom]430 ns
Supplier Device Package8-SO PowerPad
Voltage - Supply [Max]14 V
Voltage - Supply [Min]9 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.53
Digi-Reel® 1$ 3.53
Tape & Reel (TR) 2500$ 1.77
5000$ 1.71
Texas InstrumentsLARGE T&R 1$ 2.67
100$ 2.34
250$ 1.64
1000$ 1.32

Description

General part information

LM25101 Series

The LM25101 high-voltage gate driver is designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The A version provides a full 3-A of gate drive while the B and C versions provide 2-A and 1-A, respectively. The outputs are independently controlled with TTL input thresholds. An integrated high voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails.

These devices are available in the standard 8-pin SOIC, 8-pin SO-PowerPAD, 8-pin WSON, 10-pin WSON, and 8-pin MSOP PowerPAD packages.

The LM25101 high-voltage gate driver is designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The A version provides a full 3-A of gate drive while the B and C versions provide 2-A and 1-A, respectively. The outputs are independently controlled with TTL input thresholds. An integrated high voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails.