LM25101 Series

3-A, 2-A or 1-A half bridge gate driver with 8-V UVLO and TTL inputs

Catalog

3-A, 2-A or 1-A half bridge gate driver with 8-V UVLO and TTL inputs

Part	Supplier Device Package	Number of Drivers	Operating Temperature [Min]	Operating Temperature [Max]	Channel Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Mounting Type	Input Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Logic Voltage - VIL, VIH	Logic Voltage - VIL, VIH	High Side Voltage - Max (Bootstrap) [Max]	Driven Configuration	Gate Type	Package / Case [custom]	Package / Case [custom]
Texas Instruments LM25101AMX/NOPB	8-SOIC	2	-40 °C	125 ¯C	Independent	9 V	14 V	8-SOIC	3.9 mm	0.154 in	3 A	3 A	Surface Mount	Non-Inverting	260 ns	430 ns	-	2.3 V	100 V	Half-Bridge	N-Channel MOSFET
Texas Instruments LM25101CMY/NOPB	8-HVSSOP	2	-40 °C	125 ¯C	Independent	9 V	14 V	8-MSOP 8-TSSOP Exposed Pad			1 A	1 A	Surface Mount	Non-Inverting	715 ns	990 ns	-	2.3 V	100 V	Half-Bridge	N-Channel MOSFET	0.118 in 3 mm
Texas Instruments LM25101ASD/NOPB	10-WSON (4x4)	2	-40 °C	125 ¯C	Independent	9 V	14 V	10-WDFN Exposed Pad			3 A	3 A	Surface Mount	Non-Inverting	260 ns	430 ns	-	2.3 V	100 V	Half-Bridge	N-Channel MOSFET
Texas Instruments LM25101ASDX/NOPB	10-WSON (4x4)	2	-40 °C	125 ¯C	Independent	9 V	14 V	10-WDFN Exposed Pad			3 A	3 A	Surface Mount	Non-Inverting	260 ns	430 ns	-	2.3 V	100 V	Half-Bridge	N-Channel MOSFET
Texas Instruments LM25101CMYX/NOPB	8-HVSSOP	2	-40 °C	125 ¯C	Independent	9 V	14 V	8-MSOP 8-TSSOP Exposed Pad			1 A	1 A	Surface Mount	Non-Inverting	715 ns	990 ns	-	2.3 V	100 V	Half-Bridge	N-Channel MOSFET	0.118 in 3 mm
Texas Instruments LM25101CSD/NOPB	10-WSON (4x4)	2	-40 °C	125 ¯C	Independent	9 V	14 V	10-WDFN Exposed Pad			1 A	1 A	Surface Mount	Non-Inverting	715 ns	990 ns	-	2.3 V	100 V	Half-Bridge	N-Channel MOSFET
Texas Instruments LM25101BSD/NOPB	10-WSON (4x4)	2	-40 °C	125 ¯C	Independent	9 V	14 V	10-WDFN Exposed Pad			2 A	2 A	Surface Mount	Non-Inverting	430 ns	570 ns	-	2.3 V	100 V	Half-Bridge	N-Channel MOSFET
Texas Instruments LM25101CMAX/NOPB	8-SOIC	2	-40 °C	125 ¯C	Independent	9 V	14 V	8-SOIC	3.9 mm	0.154 in	1 A	1 A	Surface Mount	Non-Inverting	715 ns	990 ns	-	2.3 V	100 V	Half-Bridge	N-Channel MOSFET
Texas Instruments LM25101CMYE/NOPB	8-HVSSOP	2	-40 °C	125 ¯C	Independent	9 V	14 V	8-MSOP 8-PowerTSSOP			1 A	1 A	Surface Mount	Non-Inverting	715 ns	990 ns	-	2.3 V	100 V	Half-Bridge	N-Channel MOSFET	0.118 in	3 mm
Texas Instruments LM25101AMRX/NOPB	8-SO PowerPad	2	-40 °C	125 ¯C	Independent	9 V	14 V	8-PowerSOIC	3.9 mm	0.154 in	3 A	3 A	Surface Mount	Non-Inverting	260 ns	430 ns	-	2.3 V	100 V	Half-Bridge	N-Channel MOSFET

Catalog

3-A, 2-A or 1-A half bridge gate driver with 8-V UVLO and TTL inputs

Key Features

• Independent High and Low Driver Logic InputsBootstrap Supply Voltage up to 100-V DCDrives Both a High-Side and Low-Side N-Channel MOSFETsFast Propagation Times (25 ns Typical)Drives 1000-pF Load With 8-ns Rise and Fall TimesExcellent Propagation Delay Matching (3 ns Typical)Supply Rail Undervoltage LockoutLow Power ConsumptionPin Compatible With HIP2100 and HIP2101Independent High and Low Driver Logic InputsBootstrap Supply Voltage up to 100-V DCDrives Both a High-Side and Low-Side N-Channel MOSFETsFast Propagation Times (25 ns Typical)Drives 1000-pF Load With 8-ns Rise and Fall TimesExcellent Propagation Delay Matching (3 ns Typical)Supply Rail Undervoltage LockoutLow Power ConsumptionPin Compatible With HIP2100 and HIP2101

Description

The LM25101 high-voltage gate driver is designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The A version provides a full 3-A of gate drive while the B and C versions provide 2-A and 1-A, respectively. The outputs are independently controlled with TTL input thresholds. An integrated high voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard 8-pin SOIC, 8-pin SO-PowerPAD, 8-pin WSON, 10-pin WSON, and 8-pin MSOP PowerPAD packages. The LM25101 high-voltage gate driver is designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The A version provides a full 3-A of gate drive while the B and C versions provide 2-A and 1-A, respectively. The outputs are independently controlled with TTL input thresholds. An integrated high voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard 8-pin SOIC, 8-pin SO-PowerPAD, 8-pin WSON, 10-pin WSON, and 8-pin MSOP PowerPAD packages.