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Integrated Circuits (ICs)

LM25101CSD/NOPB

LTB
Texas Instruments

3-A, 2-A OR 1-A HALF BRIDGE GATE DRIVER WITH 8-V UVLO AND TTL INPUTS

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10-pin (DPR) package image
Integrated Circuits (ICs)

LM25101CSD/NOPB

LTB
Texas Instruments

3-A, 2-A OR 1-A HALF BRIDGE GATE DRIVER WITH 8-V UVLO AND TTL INPUTS

Technical Specifications

Parameters and characteristics for this part

SpecificationLM25101CSD/NOPB
Channel TypeIndependent
Current - Peak Output (Source, Sink) [custom]1 A
Current - Peak Output (Source, Sink) [custom]1 A
Driven ConfigurationHalf-Bridge
Gate TypeN-Channel MOSFET
High Side Voltage - Max (Bootstrap) [Max]100 V
Input TypeNon-Inverting
Logic Voltage - VIL, VIH-
Logic Voltage - VIL, VIH2.3 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-40 °C
Package / Case10-WDFN Exposed Pad
Rise / Fall Time (Typ) [custom]990 ns
Rise / Fall Time (Typ) [custom]715 ns
Supplier Device Package10-WSON (4x4)
Voltage - Supply [Max]14 V
Voltage - Supply [Min]9 V

LM25101 Series

3-A, 2-A or 1-A half bridge gate driver with 8-V UVLO and TTL inputs

PartSupplier Device PackageNumber of DriversOperating Temperature [Min]Operating Temperature [Max]Channel TypeVoltage - Supply [Min]Voltage - Supply [Max]Package / CasePackage / Case [y]Package / Case [x]Current - Peak Output (Source, Sink) [custom]Current - Peak Output (Source, Sink) [custom]Mounting TypeInput TypeRise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Logic Voltage - VIL, VIHLogic Voltage - VIL, VIHHigh Side Voltage - Max (Bootstrap) [Max]Driven ConfigurationGate TypePackage / Case [custom]Package / Case [custom]
SOIC (D)
Texas Instruments
8-SOIC
2
-40 °C
125 ¯C
Independent
9 V
14 V
8-SOIC
3.9 mm
0.154 in
3 A
3 A
Surface Mount
Non-Inverting
260 ns
430 ns
-
2.3 V
100 V
Half-Bridge
N-Channel MOSFET
8-pin (DGN) package image
Texas Instruments
8-HVSSOP
2
-40 °C
125 ¯C
Independent
9 V
14 V
8-MSOP
8-TSSOP
Exposed Pad
1 A
1 A
Surface Mount
Non-Inverting
715 ns
990 ns
-
2.3 V
100 V
Half-Bridge
N-Channel MOSFET
0.118 in
3 mm
10-WFDFN Exp Pkg
Texas Instruments
10-WSON (4x4)
2
-40 °C
125 ¯C
Independent
9 V
14 V
10-WDFN Exposed Pad
3 A
3 A
Surface Mount
Non-Inverting
260 ns
430 ns
-
2.3 V
100 V
Half-Bridge
N-Channel MOSFET
10-WFDFN Exp Pkg
Texas Instruments
10-WSON (4x4)
2
-40 °C
125 ¯C
Independent
9 V
14 V
10-WDFN Exposed Pad
3 A
3 A
Surface Mount
Non-Inverting
260 ns
430 ns
-
2.3 V
100 V
Half-Bridge
N-Channel MOSFET
8-MSOP Exp Pad Pkg
Texas Instruments
8-HVSSOP
2
-40 °C
125 ¯C
Independent
9 V
14 V
8-MSOP
8-TSSOP
Exposed Pad
1 A
1 A
Surface Mount
Non-Inverting
715 ns
990 ns
-
2.3 V
100 V
Half-Bridge
N-Channel MOSFET
0.118 in
3 mm
10-pin (DPR) package image
Texas Instruments
10-WSON (4x4)
2
-40 °C
125 ¯C
Independent
9 V
14 V
10-WDFN Exposed Pad
1 A
1 A
Surface Mount
Non-Inverting
715 ns
990 ns
-
2.3 V
100 V
Half-Bridge
N-Channel MOSFET
10-pin (DPR) package image
Texas Instruments
10-WSON (4x4)
2
-40 °C
125 ¯C
Independent
9 V
14 V
10-WDFN Exposed Pad
2 A
2 A
Surface Mount
Non-Inverting
430 ns
570 ns
-
2.3 V
100 V
Half-Bridge
N-Channel MOSFET
8-SOIC
Texas Instruments
8-SOIC
2
-40 °C
125 ¯C
Independent
9 V
14 V
8-SOIC
3.9 mm
0.154 in
1 A
1 A
Surface Mount
Non-Inverting
715 ns
990 ns
-
2.3 V
100 V
Half-Bridge
N-Channel MOSFET
LM25085MYE/NOPB
Texas Instruments
8-HVSSOP
2
-40 °C
125 ¯C
Independent
9 V
14 V
8-MSOP
8-PowerTSSOP
1 A
1 A
Surface Mount
Non-Inverting
715 ns
990 ns
-
2.3 V
100 V
Half-Bridge
N-Channel MOSFET
0.118 in
3 mm
HSOIC (DDA)
Texas Instruments
8-SO PowerPad
2
-40 °C
125 ¯C
Independent
9 V
14 V
8-PowerSOIC
3.9 mm
0.154 in
3 A
3 A
Surface Mount
Non-Inverting
260 ns
430 ns
-
2.3 V
100 V
Half-Bridge
N-Channel MOSFET

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.77
Digi-Reel® 1$ 4.77
Tape & Reel (TR) 1000$ 2.52
2000$ 2.39
Texas InstrumentsSMALL T&R 1$ 3.60
100$ 3.15
250$ 2.21
1000$ 1.78

Description

General part information

LM25101 Series

The LM25101 high-voltage gate driver is designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The A version provides a full 3-A of gate drive while the B and C versions provide 2-A and 1-A, respectively. The outputs are independently controlled with TTL input thresholds. An integrated high voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails.

These devices are available in the standard 8-pin SOIC, 8-pin SO-PowerPAD, 8-pin WSON, 10-pin WSON, and 8-pin MSOP PowerPAD packages.

The LM25101 high-voltage gate driver is designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The A version provides a full 3-A of gate drive while the B and C versions provide 2-A and 1-A, respectively. The outputs are independently controlled with TTL input thresholds. An integrated high voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails.