2N5795
ActiveDUAL SMALL-SIGNAL BJT TO-78 ROHS COMPLIANT: YES
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2N5795
ActiveDUAL SMALL-SIGNAL BJT TO-78 ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5795 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 600 mA |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 40 |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | TO-78-6 Metal Can |
| Power - Max [Max] | 600 mW |
| Supplier Device Package | TO-78-6 |
| Transistor Type | 2 PNP (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 1.6 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 36.64 | |
| Microchip Direct | N/A | 1 | $ 39.47 | |
| Newark | Each | 100 | $ 36.64 | |
| 500 | $ 35.24 | |||
Description
General part information
2N5795-Dual-Transistor Series
This specification covers the performance requirements for two electrically isolated, PNP silicon, 2N5795 and 2N5796 unitized, dual 2N2907A transistors as one dual unit for high speed saturated switching applications. Both matched and unmatched types are covered. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/496. Provisions for radiation hardness assurance (RHA) are provided for JANTXV and JANS product assurance levels. RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device package outlines are as follows: through hole mount TO-78 package and surface mount LCC6 (U) and ceramic lid surface mount LCC package.
Documents
Technical documentation and resources