Discrete Semiconductor Products

PMCXB900UEZ

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MOSFET N/P-CH 20V 0.6A 6DFN

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Discrete Semiconductor Products

Active

MOSFET N/P-CH 20V 0.6A 6DFN

Technical Specifications

Parameters and characteristics for this part

Specification	PMCXB900UEZ

Configuration	N and P-Channel Complementary
Current - Continuous Drain (Id) @ 25°C	500 mA, 600 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	0.7 nC
Input Capacitance (Ciss) (Max) @ Vds	21.3 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-XFDFN Exposed Pad
Power - Max [Max]	265 mW
Rds On (Max) @ Id, Vgs	620 mOhm
Supplier Device Package	DFN1010B-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	950 mV

Part	Vgs(th) (Max) @ Id	Configuration	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Drain to Source Voltage (Vdss)	FET Feature
Freescale Semiconductor - NXP PMCXB900UELZ	950 mV	N and P-Channel Complementary	620 mOhm	600 mA	DFN1010B-6	21.3 pF	380 mW	0.7 nC	Surface Mount	6-XFDFN Exposed Pad	-55 °C	150 °C	MOSFET (Metal Oxide)	20 V
Freescale Semiconductor - NXP PMCXB900UEZ	950 mV	N and P-Channel Complementary	620 mOhm	500 mA 600 mA	DFN1010B-6	21.3 pF	265 mW	0.7 nC	Surface Mount	6-XFDFN Exposed Pad	-55 °C	150 °C	MOSFET (Metal Oxide)	20 V	Logic Level Gate

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General part information

Mosfet Array 20V 600mA, 500mA 265mW Surface Mount DFN1010B-6

Technical documentation and resources