20 V, complementary N/P-channel Trench MOSFET
20 V, complementary N/P-channel Trench MOSFET
| Part | Technology | Mounting Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Power - Max [Max] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Configuration | Operating Temperature [Max] | Operating Temperature [Min] | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | MOSFET (Metal Oxide) | Surface Mount | DFN1010B-6 | 21.3 pF | 6-XFDFN Exposed Pad | 0.7 nC | 380 mW | 620 mOhm | 950 mV | 600 mA | 20 V | N and P-Channel Complementary | 150 °C | -55 °C | |
Nexperia USA Inc. | MOSFET (Metal Oxide) | Surface Mount | DFN1010B-6 | 21.3 pF | 6-XFDFN Exposed Pad | 0.7 nC | 265 mW | 620 mOhm | 950 mV | 500 mA 600 mA | 20 V | N and P-Channel Complementary | 150 °C | -55 °C | Logic Level Gate |