Discrete Semiconductor Products
PMCXB900UELZ
ActiveNexperia USA Inc.
DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 20 V, 20 V, 600 MA, 500 MA, 0.62 OHM
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Discrete Semiconductor Products
PMCXB900UELZ
ActiveNexperia USA Inc.
DUAL MOSFET, COMPLEMENTARY N AND P CHANNEL, 20 V, 20 V, 600 MA, 500 MA, 0.62 OHM
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PMCXB900UELZ |
|---|---|
| Configuration | N and P-Channel Complementary |
| Current - Continuous Drain (Id) @ 25°C | 600 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 0.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 21.3 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-XFDFN Exposed Pad |
| Power - Max [Max] | 380 mW |
| Rds On (Max) @ Id, Vgs | 620 mOhm |
| Supplier Device Package | DFN1010B-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 950 mV |
PMCXB900 Series
20 V, complementary N/P-channel Trench MOSFET
| Part | Technology | Mounting Type | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Power - Max [Max] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Configuration | Operating Temperature [Max] | Operating Temperature [Min] | FET Feature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | MOSFET (Metal Oxide) | Surface Mount | DFN1010B-6 | 21.3 pF | 6-XFDFN Exposed Pad | 0.7 nC | 380 mW | 620 mOhm | 950 mV | 600 mA | 20 V | N and P-Channel Complementary | 150 °C | -55 °C | |
Nexperia USA Inc. | MOSFET (Metal Oxide) | Surface Mount | DFN1010B-6 | 21.3 pF | 6-XFDFN Exposed Pad | 0.7 nC | 265 mW | 620 mOhm | 950 mV | 500 mA 600 mA | 20 V | N and P-Channel Complementary | 150 °C | -55 °C | Logic Level Gate |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PMCXB900 Series
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources