Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | MV2N5114UB |
|---|---|
| Current - Drain (Idss) @ Vds (Vgs=0) | 30 mA, 18 V |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Type | P-Channel |
| Grade | Military |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 25 pF |
| Mounting Type | Surface Mount |
| Package / Case | 3-SMD, No Lead |
| Power - Max [Max] | 500 mW |
| Qualification | MIL-PRF-19500 |
| Resistance - RDS(On) | 75 Ohms |
| Supplier Device Package | UB |
| Voltage - Breakdown (V(BR)GSS) | 30 V |
| Voltage - Cutoff (VGS off) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 100 | $ 93.48 | |
| Microchip Direct | N/A | 1 | $ 100.66 | |
| Newark | Each | 100 | $ 93.48 | |
| 500 | $ 89.88 | |||
Description
General part information
MV2N5114UB-Transistor Series
This family of 2N5114 through 2N5116 JFET P-CH transistors are military screened to JANTXV equivalent for high-reliability applications. These transistors are available in a (TO-18) and surfacemont UB package. Microchip also offers numerous other products to meet higher and lower power voltage regulation applications.
Documents
Technical documentation and resources