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Discrete Semiconductor Products

MV2N5114UB/TR

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Microchip Technology

JFET UB ROHS COMPLIANT: YES

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Search across all available documentation for this part.

UB
Discrete Semiconductor Products

MV2N5114UB/TR

Active
Microchip Technology

JFET UB ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMV2N5114UB/TR
Current - Drain (Idss) @ Vds (Vgs=0)30 mA, 18 V
Drain to Source Voltage (Vdss)30 V
FET TypeP-Channel
GradeMilitary
Input Capacitance (Ciss) (Max) @ Vds [Max]25 pF
Mounting TypeSurface Mount
Package / Case3-SMD, No Lead
Power - Max [Max]500 mW
QualificationMIL-PRF-19500
Resistance - RDS(On)75 Ohms
Supplier Device PackageUB
Voltage - Breakdown (V(BR)GSS)30 V
Voltage - Cutoff (VGS off) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 100$ 93.62
Microchip DirectN/A 1$ 100.82
NewarkEach (Supplied on Full Reel) 100$ 93.62
500$ 90.02

Description

General part information

MV2N5114UB-Transistor Series

This family of 2N5114 through 2N5116 JFET P-CH transistors are military screened to JANTXV equivalent for high-reliability applications. These transistors are available in a (TO-18) and surfacemont UB package. Microchip also offers numerous other products to meet higher and lower power voltage regulation applications.

Documents

Technical documentation and resources