
FDMC4435BZ
ActiveP-CHANNEL POWER TRENCH<SUP>®</SUP> MOSFET -30V, -18A, 20MΩ
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FDMC4435BZ
ActiveP-CHANNEL POWER TRENCH<SUP>®</SUP> MOSFET -30V, -18A, 20MΩ
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDMC4435BZ |
|---|---|
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2045 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerWDFN |
| Power Dissipation (Max) | 2.3 W, 31 W |
| Rds On (Max) @ Id, Vgs | 20 mOhm |
| Supplier Device Package | 8-MLP (3.3x3.3) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.05 | |
| 10 | $ 0.86 | |||
| 100 | $ 0.67 | |||
| 500 | $ 0.57 | |||
| 1000 | $ 0.46 | |||
| Digi-Reel® | 1 | $ 1.05 | ||
| 10 | $ 0.86 | |||
| 100 | $ 0.67 | |||
| 500 | $ 0.57 | |||
| 1000 | $ 0.46 | |||
| Tape & Reel (TR) | 3000 | $ 0.44 | ||
| 6000 | $ 0.41 | |||
| 9000 | $ 0.40 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 1.65 | |
| 10 | $ 0.90 | |||
| 25 | $ 0.81 | |||
| 50 | $ 0.72 | |||
| 100 | $ 0.63 | |||
| 250 | $ 0.57 | |||
| 500 | $ 0.51 | |||
| 1000 | $ 0.48 | |||
| ON Semiconductor | N/A | 1 | $ 0.36 | |
Description
General part information
FDMC4435BZ Series
This P-Channel MOSFET is produced using ON Semiconductor's advanced Power Trench®process that has been especially tailored to minimize the on-state resistance. This devie is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Documents
Technical documentation and resources