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FDMC4435BZ
Discrete Semiconductor Products

FDMC4435BZ-F127-L701

Obsolete
ON Semiconductor

P-CHANNEL POWER TRENCH<SUP>®</SUP> MOSFET -30V, -18A, 20MΩ

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FDMC4435BZ
Discrete Semiconductor Products

FDMC4435BZ-F127-L701

Obsolete
ON Semiconductor

P-CHANNEL POWER TRENCH<SUP>®</SUP> MOSFET -30V, -18A, 20MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMC4435BZ-F127-L701
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs53 nC
Input Capacitance (Ciss) (Max) @ Vds2045 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerWDFN
Power Dissipation (Max)2.3 W, 31 W
Rds On (Max) @ Id, Vgs20 mOhm
Supplier Device Package8-MLP (3.3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.78
10$ 1.13
100$ 0.76
500$ 0.60
1000$ 0.55
Digi-Reel® 1$ 1.18
10$ 0.97
100$ 0.75
500$ 0.64
1000$ 0.52
Tape & Reel (TR) 3000$ 0.48
6000$ 0.45
9000$ 0.44

Description

General part information

FDMC4435BZ Series

This P-Channel MOSFET is produced using ON Semiconductor's advanced Power Trench®process that has been especially tailored to minimize the on-state resistance. This devie is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.