IXFN100N65X2
ActiveDISCMSFTNCHULTJNCTNX2CLASS SOT-227B(MINI/ TUBE
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IXFN100N65X2
ActiveDISCMSFTNCHULTJNCTNX2CLASS SOT-227B(MINI/ TUBE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IXFN100N65X2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 78 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 183 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 10800 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Power Dissipation (Max) | 595 W |
| Rds On (Max) @ Id, Vgs | 30 mOhm |
| Supplier Device Package | SOT-227B |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IXFN100N65X2 Series
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings
Documents
Technical documentation and resources