IXFN100N65X2 Series

DiscMSFTNChUltJnctnX2Class SOT-227B(mini

Manufacturer: Littelfuse/Commercial Vehicle Products

Catalog

DiscMSFTNChUltJnctnX2Class SOT-227B(mini

Part	Power Dissipation (Max)	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Vgs(th) (Max) @ Id	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs
Littelfuse/Commercial Vehicle Products IXFN100N50P	1040 W	Chassis Mount	SOT-227-4 miniBLOC	500 V	90 A	30 V	49 mOhm	-55 °C	150 °C	240 nC	N-Channel	5 V	MOSFET (Metal Oxide)	10 V	20000 pF	SOT-227B
Littelfuse/Commercial Vehicle Products IXFN100N65X2	595 W	Chassis Mount	SOT-227-4 miniBLOC	650 V	78 A	30 V	30 mOhm	-55 °C	150 °C		N-Channel	5 V	MOSFET (Metal Oxide)	10 V	10800 pF	SOT-227B	183 nC

Catalog

DiscMSFTNChUltJnctnX2Class SOT-227B(mini

Key Features

• International Standard Packages

• Dynamic dv/dt Rating

• Avalanche Rated

• Fast Intrinsic Rectifier

• Low QGand RDS(on)

• Low Drain-to-Tab Capacitance

• Low Package Inductance

Description

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings