IXFN100N50P
ActiveDISCMSFT N-CH HIPERFET-POLASOT-227B(MINI
Deep-Dive with AI
Search across all available documentation for this part.
IXFN100N50P
ActiveDISCMSFT N-CH HIPERFET-POLASOT-227B(MINI
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IXFN100N50P |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 90 A |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 240 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 20000 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-227-4, miniBLOC |
| Power Dissipation (Max) | 1040 W |
| Rds On (Max) @ Id, Vgs | 49 mOhm |
| Supplier Device Package | SOT-227B |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 46.90 | |
| 10 | $ 41.79 | |||
| 100 | $ 36.68 | |||
Description
General part information
IXFN100N65X2 Series
Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast soft-recovery body diode, the Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Advantages: Higher efficiency High power density Easy to mount Space savings
Documents
Technical documentation and resources