STPSC20H12GY-TR
LTBAUTOMOTIVE 1200 V, 20 A SILICON CARBIDE DIODE
STPSC20H12GY-TR
LTBAUTOMOTIVE 1200 V, 20 A SILICON CARBIDE DIODE
Technical Specifications
Parameters and characteristics for this part
| Specification | STPSC20H12GY-TR |
|---|---|
| Capacitance @ Vr, F | 1650 pF |
| Current - Reverse Leakage @ Vr | 120 µA |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | 500 mA |
| Supplier Device Package | D2PAK |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1271 | $ 10.84 | |
Description
General part information
STPSC20H12-Y Series
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
Especially suited for use in PFC applications, the STPSC20H12-Y will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.
Documents
Technical documentation and resources