STPSC20H12-Y Series

Automotive 1200 V, 20 A Silicon Carbide Diode

Catalog

Automotive 1200 V, 20 A Silicon Carbide Diode

Part	Current - Reverse Leakage @ Vr	Speed	Package / Case	Technology	Voltage - Forward (Vf) (Max) @ If	Reverse Recovery Time (trr)	Grade	Supplier Device Package	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Qualification	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Capacitance @ Vr, F
STMicroelectronics STPSC20H12G2Y-TR	120 µA	500 mA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	SiC (Silicon Carbide) Schottky	1.5 V	0 ns	Automotive	D2PAK HV	-40 °C	175 ░C	AEC-Q101	Surface Mount	1.2 kV	1650 pF
STMicroelectronics STPSC20H12GY-TR	120 µA	500 mA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	SiC (Silicon Carbide) Schottky	1.5 V	0 ns	Automotive	D2PAK	-40 °C	175 ░C	AEC-Q101	Surface Mount	1.2 kV	1650 pF

Catalog

Automotive 1200 V, 20 A Silicon Carbide Diode

Description

The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, the STPSC20H12-Y will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases.