Discrete Semiconductor Products

STF6N60DM2

Obsolete

STMicroelectronics

MOSFET N-CH 600V 5A TO220FP

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Discrete Semiconductor Products

STF6N60DM2

Obsolete

STMicroelectronics

MOSFET N-CH 600V 5A TO220FP

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STF6N60DM2

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	274 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	20 W
Rds On (Max) @ Id, Vgs	1.1 Ohm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4.75 V

STF6N62K3 Series

N-channel 620 V, 0.95 Ohm, 5.5 A SuperMESH3(TM) Power MOSFET in TO-220FP package

Part	Operating Temperature	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	Mounting Type	FET Type	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
STMicroelectronics STF6N62K3	150 °C	TO-220-3 Full Pack	875 pF	5.5 A	1.28 Ohm	34 nC	10 V	30 V	TO-220FP	Through Hole	N-Channel	MOSFET (Metal Oxide)	4.5 V	620 V
STMicroelectronics STF6N60M2		TO-220-3 Full Pack	232 pF	4.5 A		8 nC	10 V	25 V	TO-220FP	Through Hole	N-Channel	MOSFET (Metal Oxide)	4 V	600 V	1.2 Ohm	20 W	-55 °C	150 °C
STMicroelectronics STF6N60DM2		TO-220-3 Full Pack		5 A	1.1 Ohm		10 V	25 V	TO-220FP	Through Hole	N-Channel	MOSFET (Metal Oxide)	4.75 V	600 V		20 W	-55 °C	150 °C	6.2 nC	274 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STF6N62K3 Series

This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.

Documents

Technical documentation and resources