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TO-220-F
Discrete Semiconductor Products

STF6N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 1.06 OHM TYP., 4.5 A MDMESH M2 POWER MOSFET IN TO-220FP PACKAGE

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Search across all available documentation for this part.

DocumentsDatasheetAN4829+23
TO-220-F
Discrete Semiconductor Products

STF6N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 1.06 OHM TYP., 4.5 A MDMESH M2 POWER MOSFET IN TO-220FP PACKAGE

Deep-Dive with AI

DocumentsDatasheetAN4829+23

Technical Specifications

Parameters and characteristics for this part

SpecificationSTF6N60M2
Current - Continuous Drain (Id) @ 25°C4.5 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8 nC
Input Capacitance (Ciss) (Max) @ Vds232 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)20 W
Rds On (Max) @ Id, Vgs [Max]1.2 Ohm
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1000$ 0.60
2000$ 0.59
DigikeyTube 1$ 1.44
50$ 1.16
100$ 0.92
500$ 0.78
1000$ 0.63
2000$ 0.60
5000$ 0.57
10000$ 0.54
NewarkEach 1$ 2.21
10$ 1.29
100$ 1.19
500$ 1.01
1000$ 0.90
3000$ 0.87
10000$ 0.83

Description

General part information

STF6N62K3 Series

This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.