Discrete Semiconductor Products

BYT230PIV-1000

Obsolete

DIODE MODULE GP 1000V 30A ISOTOP

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Discrete Semiconductor Products

Obsolete

DIODE MODULE GP 1000V 30A ISOTOP

Technical Specifications

Parameters and characteristics for this part

Specification	BYT230PIV-1000

Current - Average Rectified (Io) (per Diode)	30 A
Current - Reverse Leakage @ Vr	100 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Package / Case	ISOTOP
Reverse Recovery Time (trr)	165 ns
Speed	500 ns, 200 mA
Supplier Device Package	ISOTOP®
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.9 V

Part	Diode Configuration	Technology	Speed	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction [Max]	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Voltage - Forward (Vf) (Max) @ If [Max]	Reverse Recovery Time (trr)
STMicroelectronics BYT230PIV-400	2 Independent	Standard	200 mA 500 ns	Chassis Mount	ISOTOP	ISOTOP®	150 °C	30 A	35 µA	400 V	1.5 V
STMicroelectronics BYT230PIV-1000	2 Independent	Standard	200 mA 500 ns	Chassis Mount	ISOTOP	ISOTOP®	150 °C	30 A	100 µA	1000 V		1.9 V	165 ns
STMicroelectronics BYT230Y-400	1 Pair Common Cathode	Standard	200 mA 500 ns	Through Hole	TO-247-3	MAX247™	150 °C	30 A	35 µA	400 V	1.5 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 11.25

General part information

Diode Array 2 Independent 1000 V 30A Chassis Mount ISOTOP

Technical documentation and resources