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Discrete Semiconductor Products

CSD17577Q3AT

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Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 6.4 MOHM

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VSONP (DNH)
Discrete Semiconductor Products

CSD17577Q3AT

Active
Texas Instruments

30-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 6.4 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD17577Q3AT
Current - Continuous Drain (Id) @ 25°C35 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]35 nC
Input Capacitance (Ciss) (Max) @ Vds2310 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)2.8 W, 53 W
Rds On (Max) @ Id, Vgs4.8 mOhm
Supplier Device Package8-VSONP (3x3.3)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.38
10$ 1.13
100$ 0.88
Digi-Reel® 1$ 1.38
10$ 1.13
100$ 0.88
Tape & Reel (TR) 250$ 0.61
500$ 0.52
1250$ 0.52
Texas InstrumentsSMALL T&R 1$ 1.02
100$ 0.79
250$ 0.58
1000$ 0.41

Description

General part information

CSD17577Q3A Series

This 30 V, 4.0 mΩ, SON 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize resistance in power conversion applications.

This 30 V, 4.0 mΩ, SON 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize resistance in power conversion applications.