Specification	CSD17577Q5AT

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	2310 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3 W, 53 W
Rds On (Max) @ Id, Vgs	4.2 mOhm
Supplier Device Package	8-VSONP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.8 V

CSD17577Q3A Series

30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.8 mOhm

Part	Drain to Source Voltage (Vdss)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds
Texas Instruments CSD17577Q5A	30 V	Surface Mount	-55 °C	150 °C	20 V	N-Channel	35 nC	1.8 V	8-VSONP (5x6)	4.5 V 10 V	60 A	3 W 53 W	4.2 mOhm	MOSFET (Metal Oxide)	8-PowerTDFN	2310 pF
Texas Instruments CSD17577Q3AT	30 V	Surface Mount	-55 °C	150 °C	20 V	N-Channel	35 nC	1.8 V	8-VSONP (3x3.3)	4.5 V 10 V	35 A	2.8 W 53 W	4.8 mOhm	MOSFET (Metal Oxide)	8-PowerVDFN	2310 pF
Texas Instruments CSD17577Q5AT	30 V	Surface Mount	-55 °C	150 °C	20 V	N-Channel	35 nC	1.8 V	8-VSONP (5x6)	4.5 V 10 V	60 A	3 W 53 W	4.2 mOhm	MOSFET (Metal Oxide)	8-PowerTDFN	2310 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 30 V, 4.0 mΩ, SON 3.3 mm × 3.3 mm NexFET power MOSFET is designed to minimize resistance in power conversion applications.

Technical documentation and resources