
MSC010SDA170B
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.7 KV, 10 A, 84 NC, TO-247
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MSC010SDA170B
ActiveSILICON CARBIDE SCHOTTKY DIODE, SINGLE, 1.7 KV, 10 A, 84 NC, TO-247
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Technical Specifications
Parameters and characteristics for this part
| Specification | MSC010SDA170B |
|---|---|
| Capacitance @ Vr, F | 820 pF |
| Current - Average Rectified (Io) | 31 A |
| Current - Reverse Leakage @ Vr | 200 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Operating Temperature - Junction [Min] | -55 C |
| Package / Case | TO-247-3 |
| Reverse Recovery Time (trr) | 0 ns |
| Speed | No Recovery Time |
| Supplier Device Package | TO-247-3 |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1700 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 8.83 | |
| 25 | $ 8.14 | |||
| 100 | $ 6.60 | |||
| Microchip Direct | TUBE | 1 | $ 8.83 | |
| 10 | $ 8.14 | |||
| 100 | $ 7.08 | |||
| 500 | $ 6.60 | |||
| Newark | Each | 1 | $ 9.18 | |
| 10 | $ 8.94 | |||
| 25 | $ 8.70 | |||
| 50 | $ 8.47 | |||
| 100 | $ 7.91 | |||
| 250 | $ 7.36 | |||
Description
General part information
MSC010SDA120 Series
MSC010SDA070 is part of our newest family of SiC Schottky Barrier Diode (SBD) devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.
Documents
Technical documentation and resources