MSC010SDA120 Series

1200V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs)

Catalog

1200V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs)

Part	Technology	Speed	Supplier Device Package	Package / Case	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io) (per Diode)	Diode Configuration
Microchip Technology MSC010SDA070S	SiC (Silicon Carbide) Schottky	No Recovery Time	D3PAK	D3PAK (2 Leads + Tab) TO-268-3 TO-268AA	Surface Mount	700 V	10 A
Microchip Technology MSC010SDA120B	SiC (Silicon Carbide) Schottky	No Recovery Time	TO-247	TO-247-2	Through Hole	1.2 kV	10 A	1.5 V
Microchip Technology MSC010SDA170B	SiC (Silicon Carbide) Schottky	No Recovery Time	TO-247-3	TO-247-3	Through Hole	1700 V	31 A	1.8 V	820 pF	200 µA	175 ░C	-55 C
Microchip Technology MSC010SDA070B	SiC (Silicon Carbide) Schottky	No Recovery Time	TO-247	TO-247-2	Through Hole	700 V	24 A	1.8 V	353 pF	200 µA	175 ░C	-55 C
Microchip Technology MSC010SDA070BCT	SiC (Silicon Carbide) Schottky	No Recovery Time	TO-247-3	TO-247-3	Through Hole	700 V		1.8 V		200 µA	175 ░C	-55 C	24 A	1 Pair Common Cathode
Microchip Technology MSC010SDA070K	SiC (Silicon Carbide) Schottky	No Recovery Time	TO-220-2	TO-220-2	Through Hole	700 V	10 A	1.5 V

Catalog

1200V Silicon Carbide (SiC) Schottky Barrier Diodes (SBDs)

Key Features

• * AEC-Q101 Qualified

• * No reverse recovery

• * Low forward voltage

• * Low leakage current

• * Avalanche-energy rated

• * RoHS compliant

Description

MSC010SDA070 is part of our newest family of SiC Schottky Barrier Diode (SBD) devices. Microchip's SiC solutions focus on high performance helping to maximize system efficiency and minimize system weight and size. Microchip's proven SiC reliability also ensures no performance degradation over the life of the end equipment.