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Integrated Circuits (ICs)

LM5110-2SD/NOPB

Active
Texas Instruments

5-A/3-A DUAL CHANNEL GATE DRIVER WITH 4-V UVLO, DEDICATED INPUT GROUND, AND SHUTDOWN INPUT

10-pin (DPR) package image
Integrated Circuits (ICs)

LM5110-2SD/NOPB

Active
Texas Instruments

5-A/3-A DUAL CHANNEL GATE DRIVER WITH 4-V UVLO, DEDICATED INPUT GROUND, AND SHUTDOWN INPUT

Technical Specifications

Parameters and characteristics for this part

SpecificationLM5110-2SD/NOPB
Channel TypeIndependent
Current - Peak Output (Source, Sink) [custom]5 A
Current - Peak Output (Source, Sink) [custom]3 A
Driven ConfigurationLow-Side
Gate TypeN-Channel MOSFET
Input TypeInverting
Logic Voltage - VIL, VIH [custom]2.2 V
Logic Voltage - VIL, VIH [custom]0.8 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-40 °C
Package / Case10-WDFN Exposed Pad
Rise / Fall Time (Typ) [custom]12 ns
Rise / Fall Time (Typ) [custom]14 ns
Supplier Device Package10-WSON (4x4)
Voltage - Supply [Max]14 V
Voltage - Supply [Min]3.5 V
PartChannel TypeLogic Voltage - VIL, VIH [custom]Logic Voltage - VIL, VIH [custom]Supplier Device PackageInput TypeDriven ConfigurationPackage / CasePackage / Case [y]Package / Case [x]Rise / Fall Time (Typ) [custom]Rise / Fall Time (Typ) [custom]Current - Peak Output (Source, Sink) [custom]Current - Peak Output (Source, Sink) [custom]Gate TypeMounting TypeVoltage - Supply [Min]Voltage - Supply [Max]Number of DriversOperating Temperature [Min]Operating Temperature [Max]
8-SOIC
Texas Instruments
Independent
2.2 V
0.8 V
8-SOIC
Inverting
Non-Inverting
Low-Side
8-SOIC
3.9 mm
0.154 in
12 ns
14 ns
5 A
3 A
N-Channel MOSFET
Surface Mount
3.5 V
14 V
2
-40 °C
125 ¯C
10-WFDFN Exp Pkg
Texas Instruments
Independent
2.2 V
0.8 V
10-WSON (4x4)
Inverting
Non-Inverting
Low-Side
10-WDFN Exposed Pad
12 ns
14 ns
5 A
3 A
N-Channel MOSFET
Surface Mount
3.5 V
14 V
2
-40 °C
125 ¯C
8-SOIC
Texas Instruments
Independent
2.2 V
0.8 V
8-SOIC
Inverting
Non-Inverting
Low-Side
8-SOIC
3.9 mm
0.154 in
12 ns
14 ns
5 A
3 A
N-Channel MOSFET
Surface Mount
3.5 V
14 V
2
-40 °C
125 ¯C
10-WFDFN Exp Pkg
Texas Instruments
Independent
2.2 V
0.8 V
10-WSON (4x4)
Non-Inverting
Low-Side
10-WDFN Exposed Pad
12 ns
14 ns
5 A
3 A
N-Channel MOSFET
Surface Mount
3.5 V
14 V
2
-40 °C
125 ¯C
8-SOIC
Texas Instruments
Independent
2.2 V
0.8 V
8-SOIC
Inverting
Low-Side
8-SOIC
3.9 mm
0.154 in
12 ns
14 ns
5 A
3 A
N-Channel MOSFET
Surface Mount
3.5 V
14 V
2
-40 °C
125 ¯C
10-pin (DPR) package image
Texas Instruments
Independent
2.2 V
0.8 V
10-WSON (4x4)
Non-Inverting
Low-Side
10-WDFN Exposed Pad
12 ns
14 ns
5 A
3 A
IGBT
N-Channel MOSFET
Surface Mount
3.5 V
14 V
2
-40 °C
125 ¯C
10-DFN
Texas Instruments
Independent
2.2 V
0.8 V
10-WSON (4x4)
Non-Inverting
Low-Side
10-WDFN Exposed Pad
12 ns
14 ns
5 A
3 A
N-Channel MOSFET
Surface Mount
3.5 V
14 V
2
-40 °C
125 ¯C
8-SOIC
Texas Instruments
Independent
2.2 V
0.8 V
8-SOIC
Non-Inverting
Low-Side
8-SOIC
3.9 mm
0.154 in
12 ns
14 ns
5 A
3 A
N-Channel MOSFET
Surface Mount
3.5 V
14 V
2
-40 °C
125 ¯C
10-pin (DPR) package image
Texas Instruments
Independent
2.2 V
0.8 V
10-WSON (4x4)
Inverting
Low-Side
10-WDFN Exposed Pad
12 ns
14 ns
5 A
3 A
N-Channel MOSFET
Surface Mount
3.5 V
14 V
2
-40 °C
125 ¯C
SOIC (D)
Texas Instruments
Independent
2.2 V
0.8 V
8-SOIC
Non-Inverting
Low-Side
8-SOIC
3.9 mm
0.154 in
12 ns
14 ns
5 A
3 A
N-Channel MOSFET
Surface Mount
3.5 V
14 V
2
-40 °C
125 ¯C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.44
10$ 2.19
25$ 2.07
100$ 1.76
250$ 1.66
500$ 1.45
Digi-Reel® 1$ 2.44
10$ 2.19
25$ 2.07
100$ 1.76
250$ 1.66
500$ 1.45
Tape & Reel (TR) 1000$ 1.20
2000$ 1.12
5000$ 1.08
Texas InstrumentsLARGE T&R 1$ 1.84
100$ 1.52
250$ 1.09
1000$ 0.82

Description

General part information

LM5110 Series

The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCCto the output ground VEEwhich can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced WSON-10 packages.

The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCCto the output ground VEEwhich can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced WSON-10 packages.