
LM5110 Series
Manufacturer: Texas Instruments

IC GATE DRVR LOW-SIDE 8SOIC
| Part | Channel Type | Logic Voltage - VIL, VIH [custom] | Logic Voltage - VIL, VIH [custom] | Supplier Device Package | Input Type | Driven Configuration | Package / Case | Package / Case [y] | Package / Case [x] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Gate Type | Mounting Type | Voltage - Supply [Min] | Voltage - Supply [Max] | Number of Drivers | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Texas Instruments | Independent | 2.2 V | 0.8 V | 8-SOIC | Inverting Non-Inverting | Low-Side | 8-SOIC | 3.9 mm | 0.154 in | 12 ns | 14 ns | 5 A | 3 A | N-Channel MOSFET | Surface Mount | 3.5 V | 14 V | 2 | -40 °C | 125 ¯C |
Texas Instruments | Independent | 2.2 V | 0.8 V | 10-WSON (4x4) | Inverting Non-Inverting | Low-Side | 10-WDFN Exposed Pad | 12 ns | 14 ns | 5 A | 3 A | N-Channel MOSFET | Surface Mount | 3.5 V | 14 V | 2 | -40 °C | 125 ¯C | ||
Texas Instruments | Independent | 2.2 V | 0.8 V | 8-SOIC | Inverting Non-Inverting | Low-Side | 8-SOIC | 3.9 mm | 0.154 in | 12 ns | 14 ns | 5 A | 3 A | N-Channel MOSFET | Surface Mount | 3.5 V | 14 V | 2 | -40 °C | 125 ¯C |
Texas Instruments | Independent | 2.2 V | 0.8 V | 10-WSON (4x4) | Non-Inverting | Low-Side | 10-WDFN Exposed Pad | 12 ns | 14 ns | 5 A | 3 A | N-Channel MOSFET | Surface Mount | 3.5 V | 14 V | 2 | -40 °C | 125 ¯C | ||
Texas Instruments | Independent | 2.2 V | 0.8 V | 8-SOIC | Inverting | Low-Side | 8-SOIC | 3.9 mm | 0.154 in | 12 ns | 14 ns | 5 A | 3 A | N-Channel MOSFET | Surface Mount | 3.5 V | 14 V | 2 | -40 °C | 125 ¯C |
Texas Instruments | Independent | 2.2 V | 0.8 V | 10-WSON (4x4) | Non-Inverting | Low-Side | 10-WDFN Exposed Pad | 12 ns | 14 ns | 5 A | 3 A | IGBT N-Channel MOSFET | Surface Mount | 3.5 V | 14 V | 2 | -40 °C | 125 ¯C | ||
Texas Instruments | Independent | 2.2 V | 0.8 V | 10-WSON (4x4) | Non-Inverting | Low-Side | 10-WDFN Exposed Pad | 12 ns | 14 ns | 5 A | 3 A | N-Channel MOSFET | Surface Mount | 3.5 V | 14 V | 2 | -40 °C | 125 ¯C | ||
Texas Instruments | Independent | 2.2 V | 0.8 V | 8-SOIC | Non-Inverting | Low-Side | 8-SOIC | 3.9 mm | 0.154 in | 12 ns | 14 ns | 5 A | 3 A | N-Channel MOSFET | Surface Mount | 3.5 V | 14 V | 2 | -40 °C | 125 ¯C |
Texas Instruments | Independent | 2.2 V | 0.8 V | 10-WSON (4x4) | Inverting | Low-Side | 10-WDFN Exposed Pad | 12 ns | 14 ns | 5 A | 3 A | N-Channel MOSFET | Surface Mount | 3.5 V | 14 V | 2 | -40 °C | 125 ¯C | ||
Texas Instruments | Independent | 2.2 V | 0.8 V | 8-SOIC | Non-Inverting | Low-Side | 8-SOIC | 3.9 mm | 0.154 in | 12 ns | 14 ns | 5 A | 3 A | N-Channel MOSFET | Surface Mount | 3.5 V | 14 V | 2 | -40 °C | 125 ¯C |