
LM5110-1MX/NOPB
Active5-A/3-A DUAL CHANNEL GATE DRIVER WITH 4-V UVLO, DEDICATED INPUT GROUND, AND SHUTDOWN INPUT
Deep-Dive with AI
Search across all available documentation for this part.

LM5110-1MX/NOPB
Active5-A/3-A DUAL CHANNEL GATE DRIVER WITH 4-V UVLO, DEDICATED INPUT GROUND, AND SHUTDOWN INPUT
Technical Specifications
Parameters and characteristics for this part
| Specification | LM5110-1MX/NOPB |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Source, Sink) [custom] | 5 A |
| Current - Peak Output (Source, Sink) [custom] | 3 A |
| Driven Configuration | Low-Side |
| Gate Type | N-Channel MOSFET |
| Input Type | Non-Inverting |
| Logic Voltage - VIL, VIH [custom] | 2.2 V |
| Logic Voltage - VIL, VIH [custom] | 0.8 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature [Max] | 125 ¯C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Rise / Fall Time (Typ) [custom] | 12 ns |
| Rise / Fall Time (Typ) [custom] | 14 ns |
| Supplier Device Package | 8-SOIC |
| Voltage - Supply [Max] | 14 V |
| Voltage - Supply [Min] | 3.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.44 | |
| 10 | $ 2.19 | |||
| 25 | $ 2.07 | |||
| 100 | $ 1.76 | |||
| 250 | $ 1.66 | |||
| 500 | $ 1.45 | |||
| 1000 | $ 1.20 | |||
| Digi-Reel® | 1 | $ 2.44 | ||
| 10 | $ 2.19 | |||
| 25 | $ 2.07 | |||
| 100 | $ 1.76 | |||
| 250 | $ 1.66 | |||
| 500 | $ 1.45 | |||
| 1000 | $ 1.20 | |||
| Tape & Reel (TR) | 2500 | $ 1.12 | ||
| 5000 | $ 1.08 | |||
| Texas Instruments | LARGE T&R | 1 | $ 1.84 | |
| 100 | $ 1.52 | |||
| 250 | $ 1.09 | |||
| 1000 | $ 0.82 | |||
Description
General part information
LM5110 Series
The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCCto the output ground VEEwhich can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced WSON-10 packages.
The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCCto the output ground VEEwhich can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced WSON-10 packages.
Documents
Technical documentation and resources