Discrete Semiconductor Products

FERD20H60CTS

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60 V, 20 A DUAL FIELD-EFFECT RECTIFIER DIODE (FERD)

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Discrete Semiconductor Products

Active

60 V, 20 A DUAL FIELD-EFFECT RECTIFIER DIODE (FERD)

Technical Specifications

Parameters and characteristics for this part

Specification	FERD20H60CTS

Current - Average Rectified (Io) (per Diode)	10 A
Current - Reverse Leakage @ Vr	200 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Package / Case	TO-220-3
Speed	500 mA
Supplier Device Package	TO-220
Technology	FERD (Field Effect Rectifier Diode)
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If [Max]	575 mV

60 V, 20 A dual Field-Effect Rectifier Diode (FERD)

Part	Mounting Type	Current - Average Rectified (Io) (per Diode)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Speed	Supplier Device Package	Diode Configuration	Package / Case	Technology	Voltage - Forward (Vf) (Max) @ If [Max]
STMicroelectronics FERD20H60CG-TR	Surface Mount	10 A	200 µA	60 V	175 ░C	500 mA	D2PAK	1 Pair Common Cathode	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	FERD (Field Effect Rectifier Diode)	575 mV
STMicroelectronics FERD20H60CTS	Through Hole	10 A	200 µA	60 V	175 ░C	500 mA	TO-220	1 Pair Common Cathode	TO-220-3	FERD (Field Effect Rectifier Diode)	575 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1880	$ 0.84

General part information

The device is based on a proprietary technology that achieves the best in class VF/IRtrade-off for a given silicon surface.

This 60 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key.