Discrete Semiconductor Products
FERD20H60CG-TR
ActiveSTMicroelectronics
60 V, 20 A DUAL FIELD-EFFECT RECTIFIER DIODE (FERD)
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Discrete Semiconductor Products
FERD20H60CG-TR
ActiveSTMicroelectronics
60 V, 20 A DUAL FIELD-EFFECT RECTIFIER DIODE (FERD)
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | FERD20H60CG-TR |
|---|---|
| Current - Average Rectified (Io) (per Diode) | 10 A |
| Current - Reverse Leakage @ Vr | 200 µA |
| Diode Configuration | 1 Pair Common Cathode |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction [Max] | 175 ░C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Speed | 500 mA |
| Supplier Device Package | D2PAK |
| Technology | FERD (Field Effect Rectifier Diode) |
| Voltage - DC Reverse (Vr) (Max) [Max] | 60 V |
| Voltage - Forward (Vf) (Max) @ If [Max] | 575 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 391 | $ 1.26 | |
Description
General part information
FERD20H60C Series
The device is based on a proprietary technology that achieves the best in class VF/IRtrade-off for a given silicon surface.
This 60 V rectifier has been optimized for use in confined applications where both efficiency and thermal performance are key.
This device is suitable for use in adapters and chargers.
Documents
Technical documentation and resources
