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STTH12S06FP
Discrete Semiconductor Products

STTH12S06FP

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STMicroelectronics

FAST / ULTRAFAST DIODE, 600 V, 12 A, SINGLE, 3.4 V, 14 NS, 100 A, TO-220FPAC, 2 PINS

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STTH12S06FP
Discrete Semiconductor Products

STTH12S06FP

Active
STMicroelectronics

FAST / ULTRAFAST DIODE, 600 V, 12 A, SINGLE, 3.4 V, 14 NS, 100 A, TO-220FPAC, 2 PINS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTTH12S06FP
Current - Average Rectified (Io)12 A
Current - Reverse Leakage @ Vr30 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Package / CaseTO-220-2 Full Pack, Isolated Tab
Reverse Recovery Time (trr)21 ns
Speed500 ns, 200 mA
Supplier Device PackageTO-220FPAC
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If3.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 962$ 1.40

Description

General part information

STTH12S06 Series

ST's STTH12S06 is a state of the art Ultrafast recovery diode. By the use of 600 V Pt doping Planar technology, this diode will outperform the power factor correction circuits operating in hardswitching conditions. The extremely low reverse recovery current of the STTH12S06, reduces significantly the switching power losses of the MOSFET, and thus increases the efficiency of the application. This allows designers to reduce the size of their heatsinks.

This device is also intended for applications in power supplies and power conversions systems, and other power switching applications.