STTH12S06 Series

600 V, 12 A Turbo 2 Ultrafast Boost Diode

Catalog

600 V, 12 A Turbo 2 Ultrafast Boost Diode

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Package / Case	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Supplier Device Package	Reverse Recovery Time (trr)	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Technology	Speed
STMicroelectronics STTH12S06FP	600 V	30 µA	TO-220-2 Full Pack Isolated Tab	12 A	175 ░C	TO-220FPAC	21 ns	Through Hole	3.4 V	Standard	200 mA 500 ns

Catalog

600 V, 12 A Turbo 2 Ultrafast Boost Diode

Description

ST's STTH12S06 is a state of the art Ultrafast recovery diode. By the use of 600 V Pt doping Planar technology, this diode will outperform the power factor correction circuits operating in hardswitching conditions. The extremely low reverse recovery current of the STTH12S06, reduces significantly the switching power losses of the MOSFET, and thus increases the efficiency of the application. This allows designers to reduce the size of their heatsinks. This device is also intended for applications in power supplies and power conversions systems, and other power switching applications.