Discrete Semiconductor Products
CSD19537Q3T
ActiveTexas Instruments
100-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 14.5 MOHM
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Discrete Semiconductor Products
CSD19537Q3T
ActiveTexas Instruments
100-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 14.5 MOHM
Technical Specifications
Parameters and characteristics for this part
| Specification | CSD19537Q3T |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 21 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 2.8 W, 83 W |
| Rds On (Max) @ Id, Vgs [Max] | 14.5 mOhm |
| Supplier Device Package | 8-VSON-CLIP (3.3x3.3) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.6 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.54 | |
| 10 | $ 1.26 | |||
| 100 | $ 0.98 | |||
| Digi-Reel® | 1 | $ 1.54 | ||
| 10 | $ 1.26 | |||
| 100 | $ 0.98 | |||
| Tape & Reel (TR) | 250 | $ 0.97 | ||
| 500 | $ 0.83 | |||
| 1250 | $ 0.68 | |||
| 2500 | $ 0.64 | |||
| 6250 | $ 0.61 | |||
| 12500 | $ 0.58 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 1.80 | |
| 10 | $ 1.23 | |||
| 25 | $ 1.07 | |||
| 50 | $ 0.92 | |||
| 100 | $ 0.76 | |||
| 250 | $ 0.72 | |||
| 500 | $ 0.67 | |||
| 1000 | $ 0.63 | |||
| Texas Instruments | SMALL T&R | 1 | $ 1.14 | |
| 100 | $ 0.88 | |||
| 250 | $ 0.65 | |||
| 1000 | $ 0.46 | |||
Description
General part information
CSD19537Q3 Series
This 100-V, 12.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
This 100-V, 12.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Documents
Technical documentation and resources
