Discrete Semiconductor Products

CSD19537Q3

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100-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 14.5 MOHM

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Search across all available documentation for this part.

DocumentsUsing MOSFET Transient Thermal Impedance Curves In Your Design A modern approach to solid-state relay design +9

Discrete Semiconductor Products

CSD19537Q3

Active

Texas Instruments

100-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 3 MM X 3 MM, 14.5 MOHM

Deep-Dive with AI

DocumentsUsing MOSFET Transient Thermal Impedance Curves In Your Design A modern approach to solid-state relay design +9

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	CSD19537Q3

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	21 nC
Input Capacitance (Ciss) (Max) @ Vds	1680 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	2.8 W, 83 W
Rds On (Max) @ Id, Vgs [Max]	14.5 mOhm
Supplier Device Package	8-VSON-CLIP (3.3x3.3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.6 V

CSD19537Q3 Series

100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.5 mOhm

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
Texas Instruments CSD19537Q3T	N-Channel	50 A	2.8 W 83 W	3.6 V	1680 pF	MOSFET (Metal Oxide)	100 V	14.5 mOhm	20 V	Surface Mount	6 V 10 V	21 nC	8-VSON-CLIP (3.3x3.3)	8-PowerTDFN	-55 °C	150 °C
Texas Instruments CSD19537Q3	N-Channel	50 A	2.8 W 83 W	3.6 V	1680 pF	MOSFET (Metal Oxide)	100 V	14.5 mOhm	20 V	Surface Mount	6 V 10 V	21 nC	8-VSON-CLIP (3.3x3.3)	8-PowerTDFN	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.78
		10	$ 1.13
		100	$ 0.76
		500	$ 0.60
		1000	$ 0.55
	Digi-Reel®	1	$ 1.78
		10	$ 1.13
		100	$ 0.76
		500	$ 0.60
		1000	$ 0.55
	Tape & Reel (TR)	2500	$ 0.49
		5000	$ 0.46
		7500	$ 0.44
Texas Instruments	LARGE T&R	1	$ 0.86
		100	$ 0.67
		250	$ 0.49
		1000	$ 0.35

Description

General part information

CSD19537Q3 Series

This 100-V, 12.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Documents

Technical documentation and resources

CSD19537Q3

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CSD19537Q3

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Technical Specifications

CSD19537Q3 Series

Pricing

Description

CSD19537Q3 Series

Documents

Using MOSFET Transient Thermal Impedance Curves In Your Design

A modern approach to solid-state relay design

QFN and SON PCB Attachment (Rev. C)

Tips for Successfully Paralleling Power MOSFETs

Ringing Reduction Techniques for NexFET High Performance MOSFETs

MOSFET Support and Training Tools (Rev. F)

How to power your thermostat using solid state relays

Predictive maintenance solutions for HVAC filter replacement – part 1

Using MOSFET Safe Operating Area Curves in Your Design

CSD19537Q3 100-V N-Channel NexFET™ Power MOSFET datasheet (Rev. B)

Semiconductor and IC Package Thermal Metrics (Rev. D)

CSD19537Q3 Series