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Discrete Semiconductor Products
JAN2N7370
ActiveMicrochip Technology
DARLINGTON NPN SILICON POWER 100V, 12A
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Documents2N7370
Discrete Semiconductor Products
JAN2N7370
ActiveMicrochip Technology
DARLINGTON NPN SILICON POWER 100V, 12A
Deep-Dive with AI
Documents2N7370
Technical Specifications
Parameters and characteristics for this part
| Specification | JAN2N7370 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 12 A |
| Current - Collector Cutoff (Max) [Max] | 1 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 1000 |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | TO-254AA, TO-254-3 |
| Power - Max [Max] | 100 W |
| Qualification | MIL-PRF-19500/624 |
| Supplier Device Package | TO-254AA |
| Vce Saturation (Max) @ Ib, Ic | 3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Microchip Direct | N/A | 1 | $ 2457.48 | |
Description
General part information
JAN2N7370-Darlington Series
This specification covers the performance requirements for NPN silicon, high power Darlington, 2N7370 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/624.
Documents
Technical documentation and resources