Specification	MBR160

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AL, DO-41, Axial
Speed	200 mA, 500 ns
Supplier Device Package	Axial
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	750 mV

MBR160 Series

1.0 A, 60 V, Schottky Barrier Rectifier

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Current - Average Rectified (Io)	Package / Case	Mounting Type	Current - Reverse Leakage @ Vr	Supplier Device Package	Technology
ON Semiconductor MBR160RL	60 V	750 mV	150 °C	-65 C	200 mA 500 ns	1 A	Axial DO-204AL DO-41	Through Hole	500 µA	Axial	Schottky
ON Semiconductor MBR160RLG	60 V	750 mV	150 °C	-65 C	200 mA 500 ns	1 A	Axial DO-204AL DO-41	Through Hole	500 µA	Axial	Schottky
ON Semiconductor MBR160	60 V	750 mV	150 °C	-65 C	200 mA 500 ns	1 A	Axial DO-204AL DO-41	Through Hole	500 µA	Axial	Schottky

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MBR160 Series

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.