
MBR160RLG
Active1.0 A, 60 V, SCHOTTKY BARRIER RECTIFIER
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MBR160RLG
Active1.0 A, 60 V, SCHOTTKY BARRIER RECTIFIER
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Technical Specifications
Parameters and characteristics for this part
| Specification | MBR160RLG |
|---|---|
| Current - Average Rectified (Io) | 1 A |
| Current - Reverse Leakage @ Vr | 500 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -65 C |
| Package / Case | DO-204AL, DO-41, Axial |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | Axial |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 60 V |
| Voltage - Forward (Vf) (Max) @ If | 750 mV |
MBR160 Series
1.0 A, 60 V, Schottky Barrier Rectifier
| Part | Voltage - DC Reverse (Vr) (Max) [Max] | Voltage - Forward (Vf) (Max) @ If | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Speed | Current - Average Rectified (Io) | Package / Case | Mounting Type | Current - Reverse Leakage @ Vr | Supplier Device Package | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 60 V | 750 mV | 150 °C | -65 C | 200 mA 500 ns | 1 A | Axial DO-204AL DO-41 | Through Hole | 500 µA | Axial | Schottky |
ON Semiconductor | 60 V | 750 mV | 150 °C | -65 C | 200 mA 500 ns | 1 A | Axial DO-204AL DO-41 | Through Hole | 500 µA | Axial | Schottky |
ON Semiconductor | 60 V | 750 mV | 150 °C | -65 C | 200 mA 500 ns | 1 A | Axial DO-204AL DO-41 | Through Hole | 500 µA | Axial | Schottky |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.42 | |
| 10 | $ 0.33 | |||
| 100 | $ 0.20 | |||
| 500 | $ 0.18 | |||
| 1000 | $ 0.12 | |||
| 2000 | $ 0.11 | |||
| Tape & Reel (TR) | 5000 | $ 0.11 | ||
| 10000 | $ 0.10 | |||
| 25000 | $ 0.10 | |||
| 50000 | $ 0.09 | |||
| ON Semiconductor | N/A | 1 | $ 0.10 | |
Description
General part information
MBR160 Series
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.
Documents
Technical documentation and resources