MBR160 Series

1.0 A, 60 V, Schottky Barrier Rectifier

Catalog

1.0 A, 60 V, Schottky Barrier Rectifier

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Current - Average Rectified (Io)	Package / Case	Mounting Type	Current - Reverse Leakage @ Vr	Supplier Device Package	Technology
ON Semiconductor MBR160RL	60 V	750 mV	150 °C	-65 C	200 mA 500 ns	1 A	Axial DO-204AL DO-41	Through Hole	500 µA	Axial	Schottky
ON Semiconductor MBR160RLG	60 V	750 mV	150 °C	-65 C	200 mA 500 ns	1 A	Axial DO-204AL DO-41	Through Hole	500 µA	Axial	Schottky
ON Semiconductor MBR160	60 V	750 mV	150 °C	-65 C	200 mA 500 ns	1 A	Axial DO-204AL DO-41	Through Hole	500 µA	Axial	Schottky

Catalog

1.0 A, 60 V, Schottky Barrier Rectifier

Key Features

• Low Reverse Current

• Low Stored Charge, Majority Carrier Conduction

• Low Power Loss/High Efficiency

• Highly Stable Oxide Passivated JunctionMechanical Characteristics:

• Case: Epoxy, Molded

• Weight: 0.4 gram (approximately)

• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable

• Lead Surface Temperature for Soldering Purposes: 260 °C Max. for 10 Seconds

• Shipped in plastic bags, 1000 per bag

• Available Tape and Reeled, 5000 per reel, by adding a "RL'' suffix to the part number

• Polarity: Cathode Indicated by Polarity Band

• Marking: B150, B160

• These are Pb-Free Devices

Description

The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.