Discrete Semiconductor Products
FDS4465
ActiveON Semiconductor
P-CHANNEL 1.8V SPECIFIED POWERTRENCH<SUP>®</SUP> MOSFET -20V, -13.5A, 8.5MΩ
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Discrete Semiconductor Products
FDS4465
ActiveON Semiconductor
P-CHANNEL 1.8V SPECIFIED POWERTRENCH<SUP>®</SUP> MOSFET -20V, -13.5A, 8.5MΩ
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDS4465 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 13.5 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.8 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 120 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 8237 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power Dissipation (Max) | 2.5 W |
| Rds On (Max) @ Id, Vgs | 8.5 mOhm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 8 V |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.65 | |
| 10 | $ 1.35 | |||
| 100 | $ 1.05 | |||
| 500 | $ 0.89 | |||
| 1000 | $ 0.72 | |||
| Digi-Reel® | 1 | $ 1.65 | ||
| 10 | $ 1.35 | |||
| 100 | $ 1.05 | |||
| 500 | $ 0.89 | |||
| 1000 | $ 0.72 | |||
| Tape & Reel (TR) | 2500 | $ 0.68 | ||
| 5000 | $ 0.65 | |||
| 12500 | $ 0.62 | |||
| Newark | Each (Supplied on Full Reel) | 1 | $ 0.85 | |
| 3000 | $ 0.81 | |||
| 6000 | $ 0.74 | |||
| 12000 | $ 0.67 | |||
| 18000 | $ 0.64 | |||
| 30000 | $ 0.63 | |||
| ON Semiconductor | N/A | 1 | $ 0.57 | |
Description
General part information
FDS4465_F085 Series
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.
Documents
Technical documentation and resources
