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FDS4465_F085 Series

P-Channel 1.8V Specified PowerTrench<sup>®</sup> MOSFET -20V, -13.5A, 8.5 mΩ

Manufacturer: ON Semiconductor

Catalog

P-Channel 1.8V Specified PowerTrench<sup>®</sup> MOSFET -20V, -13.5A, 8.5 mΩ

Key Features

–13.5 A, –20 V. RDS(ON= 8.5 mΩ @ VGS= –4.5 V
RDS(ON)= 10.5 mΩ @ VGS= –2.5 V
RDS(ON)= 14 mΩ @ VGS= –1.8 V
Fast switching speed
High performance trench technology for extremelylow RDS(ON)
High current and power handling capability
Qualified to AEC Q101
RoHS Compliant

Description

AI
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.