FDS4465_F085 Series
P-Channel 1.8V Specified PowerTrench<sup>®</sup> MOSFET -20V, -13.5A, 8.5 mΩ
Manufacturer: ON Semiconductor
Catalog
P-Channel 1.8V Specified PowerTrench<sup>®</sup> MOSFET -20V, -13.5A, 8.5 mΩ
Key Features
• –13.5 A, –20 V. RDS(ON= 8.5 mΩ @ VGS= –4.5 V
• RDS(ON)= 10.5 mΩ @ VGS= –2.5 V
• RDS(ON)= 14 mΩ @ VGS= –1.8 V
• Fast switching speed
• High performance trench technology for extremelylow RDS(ON)
• High current and power handling capability
• Qualified to AEC Q101
• RoHS Compliant
Description
AI
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.