Discrete Semiconductor Products

FDS4410

Obsolete

ON Semiconductor

MOSFET N-CH 30V 10A 8SOIC

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DocumentsDatasheet

Discrete Semiconductor Products

FDS4410

Obsolete

ON Semiconductor

MOSFET N-CH 30V 10A 8SOIC

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDS4410

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Input Capacitance (Ciss) (Max) @ Vds	1340 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	13.5 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDS4465_F085 Series

P-Channel 1.8V Specified PowerTrench<sup>®</sup> MOSFET -20V, -13.5A, 8.5 mΩ

Part	Power Dissipation (Max)	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Package / Case	Package / Case [y]	Package / Case [x]	Vgs (Max) [Min]	Vgs (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Qualification	Grade
ON Semiconductor FDS4410	2.5 W	MOSFET (Metal Oxide)	N-Channel	4.5 V 10 V	3 V	13.5 mOhm	20 V	-55 °C	150 °C	31 nC	8-SOIC	30 V	1340 pF	10 A	Surface Mount	8-SOIC	3.9 mm	0.154 in
ON Semiconductor FDS4480	2.5 W	MOSFET (Metal Oxide)	N-Channel	10 V	5 V	12 mOhm		-55 °C	175 ░C		8-SOIC	40 V	1686 pF	10.8 A	Surface Mount	8-SOIC	3.9 mm	0.154 in	-20 V	30 V	41 nC
ON Semiconductor FDS4465-F085	2.5 W	MOSFET (Metal Oxide)	P-Channel	1.8 V 4.5 V	1.5 V	8.5 mOhm	8 V	-55 °C	150 °C	120 nC	8-SOIC	20 V	8237 pF	13.5 A	Surface Mount	8-SOIC	3.9 mm	0.154 in				AEC-Q101	Automotive
ON Semiconductor FDS4465	2.5 W	MOSFET (Metal Oxide)	P-Channel	1.8 V 4.5 V	1.5 V	8.5 mOhm	8 V	-55 °C	175 ░C	120 nC	8-SOIC	20 V	8237 pF	13.5 A	Surface Mount	8-SOIC	3.9 mm	0.154 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDS4465_F085 Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.

Documents

Technical documentation and resources