Specification	JAN2N6301

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	500 çA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	750
Grade	Military
Mounting Type	Through Hole
Operating Temperature [Max]	200 C
Operating Temperature [Min]	-55 °C
Package / Case	TO-66-2, TO-213AA
Power - Max [Max]	75 W
Qualification	MIL-PRF-19500/539
Supplier Device Package	TO-66 (TO-213AA)
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

JAN2N6301-Darlington Series

Darlington NPN Silicon Power 60V to 80V, 8A

Part	Package / Case	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Qualification	Vce Saturation (Max) @ Ib, Ic	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Grade	Mounting Type
Microchip Technology JAN2N6301	TO-213AA TO-66-2	8 A	500 çA	750	-55 °C	200 C	75 W	MIL-PRF-19500/539	3 V	TO-66 (TO-213AA)	80 V	Military	Through Hole

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 29.23
Microchip Direct	N/A	1	$ 31.47
Newark	Each	100	$ 29.22
		500	$ 28.10

Description

General part information

JAN2N6301-Darlington Series

This specification covers the performance requirements for NPN silicon power Darlington, 2N6300 and 2N6301 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device type as specified in MIL-PRF-19500/539.

Documents

Technical documentation and resources

2N6300 and 2N6301

Data Sheets

Product Change Notice EN

Datasheet