Discrete Semiconductor Products

STP95N3LLH6

Obsolete

MOSFET N-CH 30V 80A TO220AB

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 80A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	STP95N3LLH6

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	2200 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	70 W
Rds On (Max) @ Id, Vgs	4.7 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Package / Case	Vgs (Max)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature
STMicroelectronics STP95N4F3	Through Hole	MOSFET (Metal Oxide)	40 V	6.2 mOhm	N-Channel	10 V	54 nC	4 V	110 W	2200 pF	175 °C	-55 °C	TO-220	TO-220-3	20 V
STMicroelectronics STP95N2LH5	Through Hole	MOSFET (Metal Oxide)	25 V	4.9 mOhm	N-Channel	5 V 10 V		1 V		1817 pF	175 °C	-55 °C	TO-220	TO-220-3	22 V	80 W	13.4 nC
STMicroelectronics STP95N3LLH6	Through Hole	MOSFET (Metal Oxide)	30 V	4.7 mOhm	N-Channel	4.5 V 10 V	20 nC	2.5 V		2200 pF			TO-220	TO-220-3	20 V	70 W		175 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.46

General part information

N-Channel 30 V 80A (Tc) 70W (Tc) Through Hole TO-220

Technical documentation and resources