
Discrete Semiconductor Products
STP95N4F3
ActiveSTMicroelectronics
N-CHANNEL 40 V, 5.4 MOHM, 80 A, TO-220 STRIPFET(TM) III POWER MOSFET

Discrete Semiconductor Products
STP95N4F3
ActiveSTMicroelectronics
N-CHANNEL 40 V, 5.4 MOHM, 80 A, TO-220 STRIPFET(TM) III POWER MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | STP95N4F3 |
|---|---|
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) [Max] | 110 W |
| Rds On (Max) @ Id, Vgs | 6.2 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1000 | $ 0.98 | |
Description
General part information
STP95N4F3 Series
These devices are N-channel enhancement mode Power MOSFETs produced using STMicroelectronics’ STripFET™ III technology, which is specifically designed to minimize on-resistance and gate charge to provide superior switching performance.
Documents
Technical documentation and resources