Specification	MJD2955RLG

Current - Collector Cutoff (Max) [Max]	50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	20
Frequency - Transition	2 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.75 W
Supplier Device Package	DPAK
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	8 V
Voltage - Collector Emitter Breakdown (Max)	60 V

MJD2955%20(LEGACY%20FAIRCHILD) Series

10 A, 60 V PNP Bipolar Power Transistor

Part	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Mounting Type	Supplier Device Package	Frequency - Transition	Transistor Type	Current - Collector Cutoff (Max) [Max]	Operating Temperature
ON Semiconductor NJVMJD2955T4G	-55 °C	150 °C	60 V	8 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20	1.75 W	Surface Mount	DPAK	2 MHz	PNP	50 µA
ON Semiconductor MJD2955-1G	-55 °C	150 °C	60 V	8 V	IPAK TO-251-3 Short Leads TO-251AA	20	1.75 W	Through Hole	IPAK	2 MHz	PNP	50 µA
ON Semiconductor MJD2955T4G	-55 °C	150 °C	60 V	8 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20	1.75 W	Surface Mount	DPAK	2 MHz	PNP	50 µA
ON Semiconductor MJD2955TF			60 V	8 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20	1.75 W	Surface Mount	DPAK	2 MHz	PNP	50 µA	150 °C
ON Semiconductor MJD2955RLG	-55 °C	150 °C	60 V	8 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20	1.75 W	Surface Mount	DPAK	2 MHz	PNP	50 µA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MJD2955%20(LEGACY%20FAIRCHILD) Series

The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD2955 (PNP) and MJD3055 (NPN) are complementary devices.Replacement Active Part Number:MJD2955