MJD2955%20(LEGACY%20FAIRCHILD) Series

10 A, 60 V PNP Bipolar Power Transistor

Catalog

10 A, 60 V PNP Bipolar Power Transistor

Part	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Mounting Type	Supplier Device Package	Frequency - Transition	Transistor Type	Current - Collector Cutoff (Max) [Max]	Operating Temperature
ON Semiconductor NJVMJD2955T4G	-55 °C	150 °C	60 V	8 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20	1.75 W	Surface Mount	DPAK	2 MHz	PNP	50 µA
ON Semiconductor MJD2955-1G	-55 °C	150 °C	60 V	8 V	IPAK TO-251-3 Short Leads TO-251AA	20	1.75 W	Through Hole	IPAK	2 MHz	PNP	50 µA
ON Semiconductor MJD2955T4G	-55 °C	150 °C	60 V	8 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20	1.75 W	Surface Mount	DPAK	2 MHz	PNP	50 µA
ON Semiconductor MJD2955TF			60 V	8 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20	1.75 W	Surface Mount	DPAK	2 MHz	PNP	50 µA	150 °C
ON Semiconductor MJD2955RLG	-55 °C	150 °C	60 V	8 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	20	1.75 W	Surface Mount	DPAK	2 MHz	PNP	50 µA

Catalog

10 A, 60 V PNP Bipolar Power Transistor

Key Features

• Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

• Straight Lead Version in Plastic Sleeves ("-1" Suffix)

• Lead Formed Version Available in 16 mm Tape and Reel ("T4" Suffix)

• Electrically Similar to MJE2955 and MJE3055

• DC Current Gain Specified to 10 Amperes

• High Current Gain-Bandwidth ProductfT= 2.0 MHz (Min) @ IC= 500 mAdc

• NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

• These are PbFree Packages

Description

The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD2955 (PNP) and MJD3055 (NPN) are complementary devices.Replacement Active Part Number:MJD2955