
Discrete Semiconductor Products
MJD2955-1G
ObsoleteON Semiconductor
10 A, 60 V PNP BIPOLAR POWER TRANSISTOR

Discrete Semiconductor Products
MJD2955-1G
ObsoleteON Semiconductor
10 A, 60 V PNP BIPOLAR POWER TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | MJD2955-1G |
|---|---|
| Current - Collector Cutoff (Max) [Max] | 50 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 20 |
| Frequency - Transition | 2 MHz |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | IPAK, TO-251-3 Short Leads, TO-251AA |
| Power - Max [Max] | 1.75 W |
| Supplier Device Package | IPAK |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 8 V |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
MJD2955%20(LEGACY%20FAIRCHILD) Series
The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD2955 (PNP) and MJD3055 (NPN) are complementary devices.Replacement Active Part Number:MJD2955
Documents
Technical documentation and resources