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IPAK
Discrete Semiconductor Products

MJD2955-1G

Obsolete
ON Semiconductor

10 A, 60 V PNP BIPOLAR POWER TRANSISTOR

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IPAK
Discrete Semiconductor Products

MJD2955-1G

Obsolete
ON Semiconductor

10 A, 60 V PNP BIPOLAR POWER TRANSISTOR

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMJD2955-1G
Current - Collector Cutoff (Max) [Max]50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]20
Frequency - Transition2 MHz
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseIPAK, TO-251-3 Short Leads, TO-251AA
Power - Max [Max]1.75 W
Supplier Device PackageIPAK
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic8 V
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

MJD2955%20(LEGACY%20FAIRCHILD) Series

The Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The MJD2955 (PNP) and MJD3055 (NPN) are complementary devices.Replacement Active Part Number:MJD2955

Documents

Technical documentation and resources